电控可重构极化调控超表面研究进展

周洪澄 余潇然 王豫 严仲明

周洪澄, 余潇然, 王豫, 等. 电控可重构极化调控超表面研究进展[J]. 雷达学报(中英文), 待出版. doi: 10.12000/JR23230
引用本文: 周洪澄, 余潇然, 王豫, 等. 电控可重构极化调控超表面研究进展[J]. 雷达学报(中英文), 待出版. doi: 10.12000/JR23230
ZHOU Hongcheng, YU Xiaoran, WANG Yu, et al. Research progress of electrically controlled reconfigurable polarization manipulation using metasurface[J]. Journal of Radars, in press. doi: 10.12000/JR23230
Citation: ZHOU Hongcheng, YU Xiaoran, WANG Yu, et al. Research progress of electrically controlled reconfigurable polarization manipulation using metasurface[J]. Journal of Radars, in press. doi: 10.12000/JR23230

电控可重构极化调控超表面研究进展

doi: 10.12000/JR23230
基金项目: 四川省自然科学基金(2022NSFSC1801, 2023NSFSC0463)
详细信息
    作者简介:

    周洪澄,博士,讲师,主要研究方向为电磁场调控及其应用技术(电磁超材料、目标感知与成像)、天线理论与技术、时间反演电磁学

    余潇然,硕士生,主要研究方向为电磁场调控技术、天线理论与设计

    王 豫,博士,教授,主要研究方向为基于新材料物理效应的电磁场调控技术与应用、超导电工与电子技术、电磁能储存/转换与传输技术、新型电磁推进技术、复杂电磁场分析与调控技术、新型电磁材料与器件

    严仲明,博士,研究员,主要研究方向为能量存储及变换(脉冲功率、无线传能)、电磁场调控及其应用技术(电磁超材料、磁电功能器件、目标感知与识别)、电磁发射技术(直线驱动、同步控制)

    通讯作者:

    周洪澄 zhouhc@home.swjtu.edu.cn

    余潇然 yuxr0002@163.com

  • 责任主编:蒋卫祥 Corresponding Editor: JIANG Weixiang
  • 中图分类号: TN82

Research Progress of Electrically Controlled Reconfigurable Polarization Manipulation Using Metasurface

Funds: Sichuan Provincial Natural Science Foundation (2022NSFSC1801, 2023NSFSC0463)
More Information
  • 摘要: 作为一种由众多亚波长单元周期性或非周期性排列构成的二维人工结构,超表面展示了其在电磁波极化调控领域的卓越能力,开辟了电磁波调控的新途径。电控可重构极化调控超表面,可通过电信号实时调整其结构或材料特性进而动态地调控电磁波的极化状态,因而受到广泛研究关注。该文全面综述了电控可重构极化调控超表面的发展历程,详细探讨了微波段具备不同传输特性的电控可重构极化调控超表面的技术进展,并对电控可重构极化调控超表面技术的未来发展进行了深入的探讨和展望。

     

  • 图  1  手性结构透射型电控可重构极化调控超表面

    Figure  1.  Chiral structure transmission-type electrically controlled reconfigurable polarization modulation metasurface

    图  2  各向异性结构透射型电控可重构极化调控超表面

    Figure  2.  Anisotropic structure transmission-type electrically controlled reconfigurable polarization modulation metasurface

    图  3  用于无线通信的电控可重构极化调控超表面[44]

    Figure  3.  Electronically reconfigurable polarization modulation metasurface for wireless communication[44]

    图  4  各向异性结构透射型极化旋转超表面[45]

    Figure  4.  Transmission-type polarization rotating metasurface of anisotropic structure[45]

    图  5  谐振腔结构电控可重构极化调控超表面

    Figure  5.  Resonate cavity structure electronically reconfigurable polarization modulation metasurface

    图  6  基于PIN二极管的反射型电控可重构极化调控超表面

    Figure  6.  PIN diode based reflection-type electronically reconfigurable polarization modulation metasurface

    图  7  基于变容二极管的反射型电控可重构极化调控超表面[61]

    Figure  7.  Reflection-type electronically reconfigurable polarization modulation metasurface based on varactor diode[61]

    图  8  基于MEMS开关的反射型电控可重构极化调控超表面

    Figure  8.  Reflection-type electronically controlled reconfigurable polarization modulation metasurface based on MEMS switch

    图  9  透/反射一体型电控可重构极化调控超表面

    Figure  9.  Integrated transmission/reflection electrically controlled reconfigurable polarization modulation metasurfaces

    表  1  y极化入射时极化方位角随偏置电压变化情况(°)[45]

    Table  1.   Variation of polarization angle with bias voltage under y-polarized wave incidence (°)[45]

    Cy (pF) Cx (pF)
    0.18 0.20 0.22 0.24 0.26 0.30
    0.18 –0.007 11.82 24.69 35.77 45.23 59.23
    0.20 –12.58 0.008 14.09 26.24 35.33 50.67
    0.22 –28.89 –15.33 0 13.12 22.69 38.08
    0.24 –43.90 –29.94 –13.82 0.004 9.937 25.38
    0.26 –54.39 –40.57 –24.23 –10.13 –0.001 15.64
    0.30 –69.27 –56.03 –40.10 –26.13 –15.97 –0.006
    下载: 导出CSV

    表  2  透射型电控可重构极化调控超表面总结

    Table  2.   Summary of transmission-type electronically controlled reconfigurable polarization modulation metasurface

    文献 结构类型 电控器件 工作频段(GHz) 极化调控能力 极化隔离度 插入损耗 剖面 入射角稳定性
    [38] 手性 PIN二极管 9.70 线-左旋圆极化转换
    线-右旋圆极化转换
    线极化保持
    ≥20 dB
    ≥20 dB
    1.32 dB
    1.32 dB
    1 dB
    0.05λ0
    [39] 手性 PIN二极管 2.50 线-左旋圆极化转换
    线-右旋圆极化转换
    0.07λ0
    [40] 各向异性 PIN二极管 14.10~15.00 线极化保持
    线-左旋圆极化转换
    ≥10 dB ≤2 dB 0.15λ0
    [41] 各向异性 PIN二极管 14.00~16.00 线极化保持
    线-左旋圆极化转换
    0.15λ0
    [42] 各向异性 PIN二极管 2.50~3.64 线极化保持
    线-右旋圆极化转换
    ≥15 dB ≤3 dB 0.07λ0
    [43] 各向异性 PIN二极管 1.00~3.74
    2.41~3.76
    2.48~3.79
    2.58~3.89
    线极化保持
    线-左旋圆极化转换
    线-右旋圆极化转换
    线-交叉线极化转换
    ≥10 dB ≤3 dB 0.37λ0
    [44] 各向异性 变容二极管 7.50~9.50 极化椭圆度–1至1 0.25λ0
    [45] 各向异性 变容二极管 10.00 极化方位角旋转 0.52λ0
    [46] 谐振腔型 PIN二极管 5.20~16.70
    8.00~14.30
    线极化保持
    线-交叉线极化转换
    ≥15 dB ≤3 dB 0.05λ0 60°
    [47] 谐振腔型 PIN二极管 7.80~10.80
    8.30~11.20
    线极化保持
    线-交叉线极化转换
    ≥10 dB ≤2 dB 0.08λ0
    [48] 谐振腔型 PIN二极管 2.39~3.21 线极化保持
    线-交叉线极化转换
    ≥20 dB ≤3 dB 0.44λ0
    [49] 谐振腔型 PIN二极管 2.76~4.24
    3.31~3.56
    线-左旋圆极化转换
    线-交叉线极化转换
    ≥20 dB 0.16λ0
    [50] 谐振腔型 PIN二极管 3.03~3.60 线极化方位角旋转 ≤2 dB 0.21λ0
    下载: 导出CSV

    表  3  反射型电控可重构极化调控超表面总结

    Table  3.   Summary of reflection-type electronically controlled reconfigurable polarization modulation metasurface

    文献 电控器件 工作频段(GHz) 极化调控能力 极化隔离度 插入损耗 剖面 入射角稳定性
    [51] PIN二极管 2.45~3.52 线极化保持
    线-交叉线极化转换
    ≤2 dB 0.07λ0
    [52] PIN二极管 4.00~14.00
    6.40~10.30
    线极化保持
    线-交叉线极化转换
    ≤0.1 dB
    0.03λ0
    15°
    [53] PIN二极管 3.83~4.74
    3.39~5.01
    线极化保持
    线-交叉线极化转换
    ≥10 dB ≤1 dB
    0.06λ0 85°
    30°
    [54] PIN二极管 7.60~23.60
    6.50~19.90
    线-左旋圆极化转换
    线-交叉线极化转换
    ≥10 dB
    ≤1 dB
    0.12λ0
    [55] PIN二极管 5.96~15.34
    6.05~14.76
    线-左旋圆极化转换
    线-交叉线极化转换
    ≥10 dB
    ≤1 dB
    0.09λ0 20°
    20°
    [56] PIN二极管 11.80~24.10
    10.50~13.90/17.70~27.20
    线-左旋圆极化转换
    线-交叉线极化转换
    ≥10 dB
    ≤3 dB
    0.07λ0 10°
    30°
    [57] PIN二极管 7.40~12.00 线/圆极化保持
    线/圆-交叉线/圆极化转换
    ≥10 dB ≤1 dB 0.07λ0 30°
    [58] PIN二极管 3.05~3.70 线极化保持
    线-左旋圆极化转换
    线-右旋圆极化转换

    ≤1.5 dB
    ≤1.5 dB
    0.03λ0
    [59] PIN二极管 2.00~3.66/8.46~9.52
    3.77~6.20
    7.75~8.60
    5.20~6.10
    极化保持
    线-交叉线极化转换
    线-左旋圆极化转换
    线-右旋圆极化转换
    ≥10 dB ≤1 dB
    ≤1 dB

    0.04λ0 15°
    [60] PIN二极管 9.80 线极化旋转 0.07λ0
    [61] 变容二极管 4.90~8.20
    3.90~7.90
    线-左旋圆极化转换
    线-交叉线极化转换
    ≥10 dB
    ≤2 dB
    0.08λ0 20°
    30°
    [62] MEMS 7.00~14.00 线极化保持
    线-交叉线极化转换
    ≤1 dB 0.05λ0 30°
    [63] MEMS 8.07~10.77
    7.93~12.42
    线-左旋圆极化转换
    线-交叉线极化转换

    ≤1 dB
    0.08λ0
    [64] MEMS 5.7~23.8 GHz
    5.6~23.5 GHz
    线-左旋圆极化转换
    线-交叉线极化转换

    ≤1 dB
    0.12λ0
    下载: 导出CSV

    表  4  透/反射一体型电控可重构极化调控超表面总结

    Table  4.   Summary of integrated transmission/reflection electrically controlled reconfigurable polarization modulation metasurfaces

    文献 电控器件 工作频段(GHz) 极化调控能力 插入损耗 剖面 入射角稳定性
    [65] PIN二极管 2.10 透射:线-交叉线极化转换
    反射:线极化保持
    ≤1 dB 0.02λ0
    [66] PIN二极管 9.70
    9.70
    4.62~13.56
    透射:线极化保持
    透射:线-交叉线极化转换
    反射:线极化保持
    ≤0.5 dB
    ≤0.5 dB
    ≤1 dB
    0.13λ0
    [67] PIN二极管 2.09~5.00
    2.29~3.16
    1.85~2.69
    1.72~2.53
    透射:线极化保持
    透射:线-左旋圆极化转换
    透射:线-交叉线极化转换
    反射:线极化保持
    ≤2 dB 0.46λ0
    [68] PIN二极管 4.90~7.00 透射:线-交叉线极化转换
    反射:线极化保持
    ≤2 dB 0.10λ0 40°
    下载: 导出CSV
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  • 收稿日期:  2023-11-28
  • 修回日期:  2024-01-22
  • 网络出版日期:  2024-02-23

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