超宽带宽角极化不敏感的电路模拟吸波材料设计

姚智馨 肖绍球

姚智馨, 肖绍球. 超宽带宽角极化不敏感的电路模拟吸波材料设计[J]. 雷达学报, 2021, 10(2): 274–280. doi: 10.12000/JR21017
引用本文: 姚智馨, 肖绍球. 超宽带宽角极化不敏感的电路模拟吸波材料设计[J]. 雷达学报, 2021, 10(2): 274–280. doi: 10.12000/JR21017
YAO Zhixin and XIAO Shaoqiu. Wide-angle, ultra-wideband, and polarization-insensitive circuit analog absorbers[J]. Journal of Radars, 2021, 10(2): 274–280. doi: 10.12000/JR21017
Citation: YAO Zhixin and XIAO Shaoqiu. Wide-angle, ultra-wideband, and polarization-insensitive circuit analog absorbers[J]. Journal of Radars, 2021, 10(2): 274–280. doi: 10.12000/JR21017

超宽带宽角极化不敏感的电路模拟吸波材料设计

doi: 10.12000/JR21017
基金项目: 国家自然科学基金(61731005),中央高校基础研究基金(ZYGX2016Z008)
详细信息
    作者简介:

    姚智馨(1995–),男,河南信阳人,电子科技大学博士研究生。主要研究方向为超材料、雷达吸波材料的理论与设计。E-mail: yaozhixin_1995@163.com

    肖绍球(1975–),男,湖南桑植人,博士,中山大学电子与信息工程学院教授。主要研究方向为面向无线通信、雷达系统的相控阵天线理论与技术、人体可穿戴、可植入式天线与器件、电波传播与无线通信和电磁散射调控及其应用。先后共发表学术论文280篇,其中被SCI收录130篇。E-mail: xiaoshq8@mail.sysu.edu.cn

    通讯作者:

    肖绍球 xiaoshq8@mail.sysu.edu.cn

  • 责任主编:李龙 Corresponding Editor: LI Long
  • 中图分类号: O451

Wide-angle, Ultra-wideband, and Polarization-insensitive Circuit Analog Absorbers

Funds: The National Natural Science Foundation of China (61731005), The Fundamental Research Funds for the Central Universities under Grant (ZYGX2016Z008)
More Information
  • 摘要: 传统的电路模拟吸波材料设计只考虑正入射时的吸波性能,当入射角较大,尤其是大于30°时,雷达吸波器的吸波效果明显恶化。随着现代双站雷达探测技术的发展,雷达探测电磁波可能来自不同的空间方向,这就要求雷达吸波材料不仅在电磁波正入射时具有较高的吸波性能,在斜入射时同样实现良好的隐身特性。为此,该文提出了一种新型的宽带吸波材料。该材料由嵌入集总电阻的导电方环阵列和设计良好的宽角阻抗匹配(WAIM)层组成。由于WAIM层的存在,斜入射情况下的吸波性能明显改善。同时,针对电磁波正斜入射情况,该文提出了准确的等效电路模型以及严格的数学计算模型,使得结构设计清晰明了。测量结果表明,正入射时的吸波带宽达到137.1%。当入射角小于45°时,所设计吸波材料在反射系数衰减至少10 dB情况下的公共百分比吸波带宽达到110.5%。等效电路模型计算、仿真与实测结果之间的相似性验证了该文设计的有效性。

     

  • 图  1  吸波材料结构示意图

    Figure  1.  The unit cell geometry of the absorber

    图  2  所设计具备宽角阻抗匹配层的吸波材料等效电路模型

    Figure  2.  The equivalent circuit for absorber with WAIM layer

    图  3  算法计算与软件仿真分别得到的正斜入射情况下最优反射系数结果

    Figure  3.  The optimal reflection coefficient under normal and oblique incidence obtained by calculation and simulation

    图  4  为了分析简化得到的等效电路模型

    Figure  4.  The simplified equivalent circuit model for analysis

    图  5  YGNDYRLC2在TM正斜入射时的电纳值

    Figure  5.  The susceptances of YGND and YRLC2 under normal and oblique incidence for TM-polarized wave

    图  6  Ylayer1 and Ylayer2在TM极化正斜入射时的电纳值

    Figure  6.  The susceptances of Ylayer1 and Ylayer2 under normal and oblique incidence for TM-polarized wave

    图  7  有无宽角阻抗匹配层对应的TM极化斜入射反射系数结果

    Figure  7.  Reflection coefficient under TM-polarized oblique incidence with and without WAIM layer

    图  8  加工样品

    Figure  8.  Fabricated sample

    图  9  反射系数测试装置示意图

    Figure  9.  Measurement setup for reflection coefficient

    图  10  实验测试得到的正斜入射情况下反射系数结果

    Figure  10.  The optimal reflection coefficient under normal and oblique incidence obtained by simulation

    表  1  吸波性能对比

    Table  1.   Comparison of performance

    文献吸波角度
    (°)
    厚度
    (unit: λL)
    百分比带宽
    (%)
    单元结构
    [3]300.104112.0有耗方环
    [4]300.088126.8有耗双方环
    [17]500.09059.3有耗方环+十字交叉
    网格阵列
    [22]450.330101.1全介质水基
    本文450.113137.1有耗方环+宽角阻抗
    匹配层
    下载: 导出CSV
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出版历程
  • 收稿日期:  2021-03-01
  • 修回日期:  2021-04-13
  • 网络出版日期:  2021-04-28

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