Citation: | |
[1] |
CAPMANY J and NOVAK D. Microwave photonics combines two worlds[J]. Nature Photonics, 2007, 1(6): 319–330. doi: 10.1038/nphoton.2007.89
|
[2] |
潘时龙, 张亚梅. 微波光子雷达及关键技术[J]. 科技导报, 2017, 35(20): 36–52.
PAN Shilong and ZHANG Yamei. Microwave photonic radar and key technologies[J]. Science &Technology Review, 2017, 35(20): 36–52.
|
[3] |
GHELFI P, LAGHEZZA F, SCOTTI F, et al. A fully photonics-based coherent radar system[J]. Nature, 2014, 507(7492): 341–345. doi: 10.1038/nature13078
|
[4] |
CAPMANY J, LI Guifang, LIM C, et al. Microwave photonics: Current challenges towards widespread application[J]. Optics Express, 2013, 21(19): 22862–22867. doi: 10.1364/OE.21.022862
|
[5] |
MARPAUNG D, ROELOFFZEN C, HEIDEMAN R, et al. Integrated microwave photonics[J]. Laser & Photonics Reviews, 2013, 7(4): 506–538. doi: 10.1002/lpor.201200032
|
[6] |
MUÑOZ P, CAPMANY J, PÉREZ D, et al. Integrated microwave photonics: State of the art and future trends[C]. Proceedings of the 16th International Conference on Transparent Optical Networks (ICTON), Graz, Austria, 2014: 1–4. doi: 10.1109/ICTON.2014.6876725.
|
[7] |
HOU Lianping, HAJI M, AKBAR J, et al. AlGaInAs/InP monolithically integrated DFB laser array[J]. IEEE Journal of Quantum Electronics, 2012, 48(2): 137–143. doi: 10.1109/JQE.2011.2174455
|
[8] |
SADIQ M U, ROYCROFT B, O’CALLAGHAN J, et al. Efficient modelling approach for an InP based Mach-Zehnder modulator[C]. Proceedings of the 25th IET Irish Signals & Systems Conference 2014 and 2014 China-Ireland International Conference on Information and Communications Technologies, Limerick, Ireland, 2014. doi: 10.1049/cp.2014.0671.
|
[9] |
AUGUSTIN L M, HANFOUG R, VAN DER TOL J J G M, et al. A compact integrated polarization splitter/converter in InGaAsP-InP[J]. IEEE Photonics Technology Letters, 2007, 19(17): 1286–1288. doi: 10.1109/LPT.2007.902277
|
[10] |
DING Minsheng, WONFOR A, Cheng Qixiang, et al. Hybrid MZI-SOA InGaAs/InP photonic integrated switches[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2018, 24(1): 3600108. doi: 10.1109/JSTQE.2017.2759278
|
[11] |
SMIT M, LEIJTENS X, AMBROSIUS H, et al. An introduction to InP-based generic integration technology[J]. Semiconductor Science and Technology, 2014, 29(8): 083001. doi: 10.1088/0268-1242/29/8/083001
|
[12] |
VAN DER TOL J J G M, OEI Y S, KHALIQUE U, et al. InP-based photonic circuits: Comparison of monolithic integration techniques[J]. Progress in Quantum Electronics, 2010, 34(4): 135–172. doi: 10.1016/j.pquantelec.2010.02.001
|
[13] |
WU Fang, TOLSTIKHIN V I, DENSMORE A S, et al. Two-step lateral taper spot-size converter for efficient fiber coupling to InP-based photonic integrated circuits[C]. Proceedings Volume 5577, Photonics North 2004: Optical Components and Devices, Ottawa, Ontario, Canada, 2004: 213–220. doi: 10.1117/12.567349.
|
[14] |
KOHTOKU M, OKU S, KADOTA Y, et al. Spotsize converter with improved design for InP-based deep-ridge waveguide structure[J]. Journal of Lightwave Technology, 2005, 23(12): 4207–4214. doi: 10.1109/JLT.2005.854042
|
[15] |
KITAMURA T, KONO N, YAGI H, et al. Dual-core spot-size converter with tapered cladding layer designed for high-efficiency mode coupling to InP-based deep-ridge waveguide[C]. Proceedings of 2014 IEEE Photonics Conference, San Diego, USA, 2014: 280–281. doi: 10.1109/IPCon.2014.6995353.
|
[16] |
SOARES F M, KAROUTA F, GELUK E J, et al. A compact and fast photonic true-time-delay beamformer with integrated spot-size converters[C]. Proceedings of Integrated Photonics Research and Applications/Nanophotonics, Uncasville, Connecticut United States, 2006. doi: 10.1364/IPRA.2006.IMF5.
|
[17] |
KIM D J, HAN W S, KIM D Y, et al. InP-based vertical dual-waveguide fiber-coupling structure[C]. Proceedings of the 12th International Conference on Optical Internet, Jeju, South Korea, 2014: 1–2. doi: 10.1109/COIN.2014.6950599.
|
[18] |
TOLSTIKHIN V, SAEIDI S, and DOLGALEVA K. Design optimization and tolerance analysis of a spot-size converter for the taper-assisted vertical integration platform in InP[J]. Applied Optics, 2018, 57(13): 3586–3591. doi: 10.1364/AO.57.003586
|
[19] |
WON R and PANICCIA M. Integrating silicon photonics[J]. Nature Photonics, 2010, 4(8): 498–499. doi: 10.1038/nphoton.2010.189
|
[20] |
ZHUANG Leimeng, MARPAUNG D, BURLA M, et al. Low-loss, high-index-contrast Si3N4/SiO2 optical waveguides for optical delay lines in microwave photonics signal processing[J]. Optics Express, 2011, 19(23): 23162–23170. doi: 10.1364/OE.19.023162
|
[21] |
ROELOFFZEN C G H, ZHUANG Leimeng, TADDEI C, et al. Silicon nitride microwave photonic circuits[J]. Optics Express, 2013, 21(19): 22937–22961. doi: 10.1364/OE.21.022937
|
[22] |
SOREF R. The past, present, and future of silicon photonics[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2006, 12(6): 1678–1687. doi: 10.1109/JSTQE.2006.883151
|
[23] |
RONG Haisheng, JONES R, LIU Ansheng, et al. A continuous-wave Raman silicon laser[J]. Nature, 2005, 433(7027): 725–728. doi: 10.1038/nature03346
|
[24] |
LIU Jifeng, SUN Xiaochen, PAN Dong, et al. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si[J]. Optics Express, 2007, 15(18): 11272–11277. doi: 10.1364/OE.15.011272
|
[25] |
LIU Jifeng, SUN Xiaochen, CAMACHO-AGUILERA R, et al. Ge-on-Si laser operating at room temperature[J]. Optics Letters, 2010, 35(5): 679–681. doi: 10.1364/OL.35.000679
|
[26] |
CAMACHO-AGUILERA R E, CAI Yan, PATEL N, et al. An electrically pumped germanium laser[J]. Optics Express, 2012, 20(10): 11316–11320. doi: 10.1364/OE.20.011316
|
[27] |
LIU Jifeng, KIMERLING L C, and MICHEL J. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration[J]. Semiconductor Science and Technology, 2012, 27(9): 094006. doi: 10.1088/0268-1242/27/9/094006
|
[28] |
DUTT B, SUKHDEO D S, NAM D, et al. Roadmap to an efficient germanium-on-silicon laser: Strain vs. n-type doping[J]. IEEE Photonics Journal, 2012, 4(5): 2002–2009. doi: 10.1109/jphot.2012.2221692
|
[29] |
LIU Ansheng, JONES R, LIAO L, et al. A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor[J]. Nature, 2004, 427(6975): 615–618. doi: 10.1038/nature02310
|
[30] |
LIAO L, LIU A, RUBIN D, et al. 40 Gbit/s silicon optical modulator for highspeed applications[J]. Electronics Letters, 2007, 43(22): 9944669. doi: 10.1049/el:20072253
|
[31] |
THOMSON D J, GARDES F Y, FEDELI J M, et al. 50-Gb/s silicon optical modulator[J]. IEEE Photonics Technology Letters, 2012, 24(4): 234–236. doi: 10.1109/LPT.2011.2177081
|
[32] |
HU Yingtao, XIAO Xi, XU Hao, et al. High-speed silicon modulator based on cascaded microring resonators[J]. Optics Express, 2012, 20(14): 15079–15085. doi: 10.1364/oe.20.015079
|
[33] |
TU Xiaoguang, LIOW T Y, SONG Junfeng, et al. 50-Gb/s silicon optical modulator with traveling-wave electrodes[J]. Optics Express, 2013, 21(10): 12776–12782. doi: 10.1364/OE.21.012776
|
[34] |
MAEGAMI Y, CONG Guangwei, OHNO M, et al. High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter[J]. Optics Express, 2017, 25(25): 31407–31416. doi: 10.1364/oe.25.031407
|
[35] |
LI Miaofeng, WANG Lei, LI Xiang, et al. Silicon intensity Mach-Zehnder modulator for single lane 100 Gb/s applications[J]. Photonics Research, 2018, 6(2): 109–116. doi: 10.1364/prj.6.000109
|
[36] |
YIN Tao, COHEN R, MORSE M M, et al. 31GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate[J]. Optics Express, 2007, 15(21): 13965–13971. doi: 10.1364/OE.15.013965
|
[37] |
FENG Dazeng, LIAO Shirong, DONG Po, et al. High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide[J]. Applied Physics Letters, 2009, 95(26): 261105. doi: 10.1063/1.3279129
|
[38] |
MICHEL J, LIU Jifeng, and KIMERLING L C. High-performance Ge-on-Si photodetectors[J]. Nature Photonics, 2010, 4(8): 527–534. doi: 10.1038/nphoton.2010.157
|
[39] |
LIAO Shirong, FENG Ningning, FENG Dazeng, et al. 36 GHz submicron silicon waveguide germanium photodetector[J]. Optics Express, 2011, 19(11): 10967–10972. doi: 10.1364/OE.19.010967
|
[40] |
CUI Jishi, BAI Bowen, YANG Fenghe, et al. Optical saturation characteristics of dual- and single-injection Ge-on-Si photodetectors[J]. Chinese Optics Letters, 2018, 16(7): 072502.
|
[41] |
ZHANG Weifeng and YAO Jianping. Silicon photonic integrated optoelectronic oscillator for frequency-tunable microwave generation[J]. Journal of Lightwave Technology, 2018, 36(19): 4655–4663. doi: 10.1109/JLT.2018.2829823
|
[42] |
ZHANG Weifeng and YAO Jianping. On-chip silicon photonic integrated frequency-tunable bandpass microwave photonic filter[J]. Optics Letters, 2018, 43(15): 3622–3625. doi: 10.1364/OL.43.003622
|
[43] |
QIU Huaqing, ZHOU Feng, QIE Jinran, et al. A continuously tunable sub-gigahertz microwave photonic bandpass filter based on an ultra-high-Q silicon microring resonator[J]. Journal of Lightwave Technology, 2018, 36(19): 4312–4318. doi: 10.1109/JLT.2018.2822829
|
[44] |
ZHANG Dengke, FENG Xue, LI Xiangdong, et al. Tunable and reconfigurable bandstop microwave photonic filter based on integrated microrings and Mach-Zehnder interferometer[J]. Journal of Lightwave Technology, 2013, 31(23): 3668–3675. doi: 10.1109/jlt.2013.2287091
|
[45] |
ZHAO Shuoyi, LU Liangjun, ZHOU Linjie, et al. 16×16 silicon Mach-Zehnder interferometer switch actuated with waveguide microheaters[J]. Photonics Research, 2016, 4(5): 202–207. doi: 10.1364/PRJ.4.000202
|
[46] |
TESTA F, OTON C J, KOPP C, et al. Design and implementation of an integrated reconfigurable silicon photonics switch matrix in IRIS project[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2016, 22(6): 155–168. doi: 10.1109/JSTQE.2016.2547322
|
[47] |
HU Yingtao, XIAO Xi, LI Xianyao, et al. Continuously tunable time delay and advance in coupling-modulated microring resonators[C]. Proceedings of SPIE 8333, Photonics and Optoelectronics Meetings 2011: Optoelectronic Devices and Integration, Wuhan, China, 2011: 833303. doi: 10.1117/12.920404.
|
[48] |
ZHOU L, SUN X, XIE J, et al. Characterisation of microring resonator optical delay and its dependence on coupling gap using modulation phase-shift technique[J]. Electronics Letters, 2012, 48(25): 1613–1614. doi: 10.1049/el.2012.2743
|
[49] |
WANG Junjia, ASHRAFI R, ADAMS R, et al. Subwavelength grating enabled on-chip ultra-compact optical true time delay line[J]. Scientific Reports, 2016, 6: 30235. doi: 10.1038/srep30235
|
[50] |
MARPAUNG D, MORRISON B, PANT R, et al. Si3N4 ring resonator-based microwave photonic notch filter with an ultrahigh peak rejection[J]. Optics Express, 2013, 21(20): 23286–23294. doi: 10.1364/OE.21.023286
|
[51] |
XIANG Chao, DAVENPORT M L, KHURGIN J B, et al. Low-loss continuously tunable optical true time delay based on si3n4 ring resonators[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2018, 24(4): 5900109. doi: 10.1109/JSTQE.2017.2785962
|
[52] |
BURLA M, MARPAUNG D, ZHUANG Leimeng, et al. Integrated photonic Ku-band beamformer chip with continuous amplitude and delay control[J]. IEEE Photonics Technology Letters, 2013, 25(12): 1145–1148. doi: 10.1109/LPT.2013.2257723
|
[53] |
LIU Yuan, WICHMAN A, ISAAC B, et al. Tuning optimization of ring resonator delays for integrated optical beam forming networks[J]. Journal of Lightwave Technology, 2017, 35(22): 4954–4960. doi: 10.1109/JLT.2017.2762641
|
[54] |
KAMINOW I P, CARRUTHERS J R, TURNER E H, et al. Thin-film LiNbO3 electro-optic light modulator[J]. Applied Physics Letters, 1973, 22(10): 540–542. doi: 10.1063/1.1654500
|
[55] |
HOWERTON M M, MOELLER R P, GREENBLATT A S, et al. Fully packaged, broad-band LiNbO3 modulator with low drive voltage[J]. IEEE Photonics Technology Letters, 2000, 12(7): 792–794. doi: 10.1109/68.853502
|
[56] |
DOLFI D W and RANGANATH T R. 50 GHz velocity-matched broad wavelength LiNbO3 modulator with multimode active section[J]. Electronics Letters, 1992, 28(13): 1197–1198. doi: 10.1049/el:19920756
|
[57] |
IZUTSU M, YAMANE Y, and SUETA T. Broad-band traveling-wave modulator using a LiNbO3 optical waveguide[J]. IEEE Journal of Quantum Electronics, 1977, 13(4): 287–290. doi: 10.1109/JQE.1977.1069310
|
[58] |
KAWANISHI T, SAKAMOTO T, TSUCHIYA M, et al. 70dB extinction-ratio LiNbO3 optical intensity modulator for two-tone lightwave generation[C]. Proceedings of Optical Fiber Communication Conference and Exposition and The National Fiber Optic Engineers Conference, Anaheim, California, USA, 2006: 1–3. doi: 10.1109/OFC.2006.215457.
|
[59] |
KONDO J, AOKI K, IWATA Y, et al. 76-GHz millimeter-wave generation using MZ LiNbO3 modulator with drive voltage of 7 Vp-pand 19 GHz signal input[C]. Proceedings of 2005 International Topical Meeting on Microwave Photonics, Seoul, Korea, 2005. doi: 10.1109/MWP.2005.203613.
|
[60] |
SAKAMOTO T, KAWANISHI T, and IZUTSU M. Optoelectronic oscillator using a LiNbO3 phase modulator for self-oscillating frequency comb generation[J]. Optics Letters, 2006, 31(6): 811–813. doi: 10.1364/OL.31.000811
|
[61] |
BONINO S, GALEOTTI R, GOBBI L, et al. High speed packaging solutions for LiNbO3 electro-optical modulator[C]. Proceedings of 2009 European Microelectronics and Packaging Conference, Rimini, Italy, 2009: 1–5.
|
[62] |
GUTIÉRREZ-MARTINEZ C, AND H P, and GOEDGEBUER J P. Microwave integrated optics LiNbO3 coherence modulator for high‐speed optical communications[J]. Microwave and Optical Technology Letters, 1995, 10(1): 66–70. doi: 10.1002/mop.4650100121
|
[63] |
KAWANISHI T and KANNO A. LiNbO3 modulator for modern optical communications[C]. Proceedings of the 17th Opto-Electronics and Communications Conference, Busan, South Korea, 2012: 65–66. doi: 10.1109/OECC.2012.6276373.
|
[64] |
SHIGEMATSU H, SATO M, HIROSE T, et al. A 54-GHz distributed amplifier with 6-VPP output for a 40-Gb/s LiNbO3 modulator driver[J]. IEEE Journal of Solid-State Circuits, 2002, 37(9): 1100–1105. doi: 10.1109/JSSC.2002.801167
|
[65] |
MACARIO J, YAO Peng, SHIREEN R, et al. Development of electro-optic phase modulator for 94 GHz imaging system[J]. Journal of Lightwave Technology, 2009, 27(24): 5698–5703. doi: 10.1109/JLT.2009.2035641
|
[66] |
WANG Cheng, ZHANG Mian, STERN B, et al. Nanophotonic lithium niobate electro-optic modulators[J]. Optics Express, 2018, 26(2): 1547–1555. doi: 10.1364/OE.26.001547
|
[67] |
JIN Shilei, XU Longtao, ZHANG Haihua, et al. LiNbO3 thin-film modulators using silicon nitride surface ridge waveguides[J]. IEEE Photonics Technology Letters, 2016, 28(7): 736–739. doi: 10.1109/LPT.2015.2507136
|
[68] |
LIU Ming, YIN Xiaobo, ULIN-AVILA E, et al. A graphene-based broadband optical modulator[J]. Nature, 2011, 474(7349): 64–67. doi: 10.1038/nature10067
|
[69] |
KOESTER S J and LI Mo. High-speed waveguide-coupled graphene-on-graphene optical modulators[J]. Applied Physics Letters, 2012, 100(17): 171107. doi: 10.1063/1.4704663
|
[70] |
LI Wei, CHEN Bigeng, MENG Chao, et al. Ultrafast all-optical graphene modulator[J]. Nano Letters, 2014, 14(2): 955–959. doi: 10.1021/nl404356t
|
[71] |
YOUNGBLOOD N, ANUGRAH Y, MA Rui, et al. Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides[J]. Nano Letters, 2014, 14(5): 2741–2746. doi: 10.1021/nl500712u
|
[72] |
PHARE C T, LEE Y H D, CARDENAS J, et al. Graphene electro-optic modulator with 30 GHz bandwidth[J]. Nature Photonics, 2015, 9(8): 511–514. doi: 10.1038/nphoton.2015.122
|
[73] |
KEIL N, YAO H H, ZAWADZKI C, et al. 4×4 polymer thermo-optic directional coupler switch at 1.55μm[J]. Electronics Letters, 1994, 30(8): 639–540. doi: 10.1049/el:19940457
|
[74] |
SHI Yongqiang, LIN Weiping, OLSON D J, et al. Electro-optic polymer modulators with 0.8 V half-wave voltage[J]. Applied Physics Letters, 2000, 77(1): 1. doi: 10.1063/1.126857
|
[75] |
ZHANG Hua, OH M C, SZEP A, et al. Push-pull electro-optic polymer modulators with low half-wave voltage and low loss at both 1310 and 1550 nm[J]. Applied Physics Letters, 2001, 78(20): 3136–3138. doi: 10.1063/1.1372203
|
[76] |
RABIEI P, STEIER W H, ZHANG Cheng, et al. Polymer micro-ring filters and modulators[J]. Journal of Lightwave Technology, 2002, 20(11): 1968–1975. doi: 10.1109/JLT.2002.803058
|
[77] |
SONG H C, OH M C, AHN S W, et al. Flexible low-voltage electro-optic polymer modulators[J]. Applied Physics Letters, 2003, 82(25): 4432–4434. doi: 10.1063/1.1586474
|
[78] |
BORTNIK B, HUNG Y C, TAZAWA H, et al. Electrooptic polymer ring resonator modulation up to 165 GHz[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2007, 13(1): 104–110. doi: 10.1109/jstqe.2006.887156
|
[79] |
CHEN H, CHEN B, HUANG D, et al. Broadband electro-optic polymer modulators with high electro-optic activity and low poling induced optical loss[J]. Applied Physics Letters, 2008, 93(4): 043507. doi: 10.1063/1.2965809
|
[80] |
CHEN Changming, ZHANG Feng, WANG Hui, et al. UV curable electro-optic polymer switch based on direct photodefinition technique[J]. IEEE Journal of Quantum Electronics, 2011, 47(7): 959–964. doi: 10.1109/JQE.2011.2145412
|
[81] |
CHEN Datong, FETTERMAN H R, CHEN Antao, et al. Demonstration of 110 GHz electro-optic polymer modulators[J]. Applied Physics Letters, 1997, 70(25): 3335–3337. doi: 10.1063/1.119162
|
[82] |
CAI Wenshan, WHITE J S, and BRONGERSMA M L. Compact, high-speed and power-efficient electrooptic plasmonic modulators[J]. Nano Letters, 2009, 9(12): 4403–4411. doi: 10.1021/nl902701b
|
[83] |
AYATA M, FEDORYSHYN Y, HENI W, et al. High-speed plasmonic modulator in a single metal layer[J]. Science, 2017, 358(6363): 630–632. doi: 10.1126/science.aan5953
|
[84] |
HIRAKI T, AIHARA T, HASEBE K, et al. Heterogeneously integrated InP/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator[C]. Proceedings of 2017 Optical Fiber Communications Conference and Exhibition, Los Angeles, USA, 2017: 1–3. doi: 10.1364/OFC.2017.W3E.1.
|
[85] |
Chen H. High-speed hybrid silicon Mach-Zehnder modulator and tunable microwave filter[D]. [Ph.D. dissertation], University of California Santa Barbara, 2011.
|
[86] |
CHEN Huiwen, KUO Yinghao, and BOWERS J E. A high speed Mach-Zehnder silicon evanescent modulator using capacitively loaded traveling wave electrode[C]. Proceedings of the 6th IEEE International Conference on Group IV Photonics, San Francisco, 2009. doi: 10.1109/GROUP4.2009.5338370.
|
[87] |
LAMPONI M, KEYVANINIA S, JANY C, et al. Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler[J]. IEEE Photonics Technology Letters, 2012, 24(1): 76–78. doi: 10.1109/LPT.2011.2172791
|
[88] |
ROELKENS G, VAN THOURHOUT D, BAETS R, et al. Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit[J]. Optics Express, 2006, 14(18): 8154–8159. doi: 10.1364/OE.14.008154
|
[89] |
ABBASI A, MOENECLAEY B, VERBIST J, et al. 56 Gb/s direct modulation of an InP-on-Si DFB laser diode[C]. Proceedings of 2017 IEEE Optical Interconnects Conference, Santa Fe, USA, 2017: 31–32. doi: 10.1109/OIC.2017.7965516.
|
[90] |
ABBASI A, SPATHARAKIS C, KANAKIS G, et al. High speed direct modulation of a heterogeneously integrated InP/SOI DFB laser[J]. Journal of Lightwave Technology, 2016, 34(8): 1683–1687. doi: 10.1109/JLT.2015.2510868
|
[91] |
BELING A, PIELS M, CROSS A S, et al. High-power InP-based waveguide photodiodes and photodiode arrays heterogeneously integrated on SOI[C]. Proceedings of 2012 International Conference on Indium Phosphide and Related Materials, Santa Barbara, USA, 2012. doi: 10.1109/ICIPRM.2012.6403349.
|
[92] |
HIRAKI T, AIHARA T, HASEBE K, et al. Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator[J]. Nature Photonics, 2017, 11(8): 482–485. doi: 10.1038/nphoton.2017.120
|
[93] |
SHEN L, JIAO Y, YAO W, et al. High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform[J]. Optics Express, 2016, 24(8): 8290–8301. doi: 10.1364/OE.24.008290
|
[94] |
RAO A and FATHPOUR S. Compact lithium niobate electrooptic modulators[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2018, 24(4): 3400114. doi: 10.1109/JSTQE.2017.2779869
|
[95] |
MERCANTE A J, ENG D L K, KONKOL M, et al. Thin LiNbO3 on insulator electro-optic modulator[J]. Optics Letters, 2016, 41(5): 867–869. doi: 10.1364/OL.41.000867
|
[96] |
MERCANTE A J, YAO Peng, SHI Shouyuan, et al. 110 GHz CMOS compatible thin film LiNbO3 modulator on silicon[J]. Optics Express, 2016, 24(14): 15590–15595. doi: 10.1364/oe.24.015590
|
[97] |
WANG Cheng, ZHANG Mian, CHEN Xi, et al. Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages[J]. Nature, 2018, 562(7725): 101–104. doi: 10.1038/s41586-018-0551-y
|
[98] |
HE Mingbo, XU Mengyue, REN Yuxuan, et al. High-performance hybrid silicon and lithium niobate Mach-Zehnder modulators for 100 Gbit s−1 and beyond[J]. Nature Photonics, 2019: 1–6. doi: 10.1038/s41566-019-0378-6
|
[99] |
LINDENMANN N, BALTHASAR G, PALMER R, et al. Photonic wire bonding for single-mode chip-to-chip interconnects[C]. Proceedings of the 8th IEEE International Conference on Group IV Photonics, London, UK, 2011: 380–382. doi: 10.1109/GROUP4.2011.6053823.
|
[100] |
LINDENMANN N, BALTHASAR G, HILLERKUSS D, et al. Photonic wire bonding: A novel concept for chip-scale interconnects[J]. Optics Express, 2012, 20(16): 17667–17677. doi: 10.1364/oe.20.017667
|
[101] |
KOOS C, LEUTHOLD J, FREUDE W, et al. Photonic wire bonding: Connecting nanophotonic circuits across chip boundaries[C]. Proceedings of SPIE 8613, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VI, San Francisco, 2013: 86130W. doi: 10.1117/12.2003096.
|
[102] |
LINDENMANN N, DOTTERMUSCH S, GOEDECKE M L, et al. Connecting silicon photonic circuits to multicore fibers by photonic wire bonding[J]. Journal of Lightwave Technology, 2015, 33(4): 755–760. doi: 10.1109/jlt.2014.2373051
|
[103] |
HOOSE T, BILLAH M, BLAICHER M, et al. Multi-chip integration by photonic wire bonding: Connecting surface and edge emitting lasers to silicon chips[C]. Proceedings of 2016 Optical Fiber Communications Conference and Exhibition, Anaheim, USA, 2016: 1–3. doi: 10.1364/OFC.2016.M2I.7.
|
[104] |
BILLAH M R, BLAICHER M, HOOSE T, et al. Hybrid integration of silicon photonics circuits and InP lasers by photonic wire bonding[J]. Optica, 2018, 5(7): 876–883. doi: 10.1364/OPTICA.5.000876
|
[105] |
STULEMEIJER J, VAN VLIET F E, BENOIST K W, et al. Compact photonic integrated phase and amplitude controller for phased-array antennas[J]. IEEE Photonics Technology Letters, 1999, 11(1): 122–124. doi: 10.1109/68.736416
|
[106] |
BACH H G, BELING A, MEKONNEN G G, et al. InP-based waveguide-integrated photodetector with 100-GHz bandwidth[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2004, 10(4): 668–672. doi: 10.1109/jstqe.2004.831510
|
[107] |
RISTIC S, BHARDWAJ A, RODWELL M J, et al. An optical phase-locked loop photonic integrated circuit[J]. Journal of Lightwave Technology, 2010, 28(4): 526–538. doi: 10.1109/JLT.2009.2030341
|
[108] |
NORBERG E J, GUZZON R S, PARKER J S, et al. Programmable photonic microwave filters monolithically integrated in InP-InGaAsP[J]. Journal of Lightwave Technology, 2011, 29(11): 1611–1619. doi: 10.1109/JLT.2011.2134073
|
[109] |
ZHU Hongliang, MA Li, LIANG Song, et al. InP based DFB laser array integrated with MMI coupler[J]. Science China Technological Sciences, 2013, 56(3): 573–578. doi: 10.1007/s11431-012-5118-9
|
[110] |
RUNGE P, ZHOU Gan, SEEGER A, et al. 80GHz balanced photodetector chip for next generation optical networks[C]. Proceedings of 2014 Optical Fiber Communication Conference, San Francisco, USA, 2014. doi: 10.1364/OFC.2014.M2G.3.
|
[111] |
LANGE S, YAN L, WOLF N, et al. Low power InP-based monolithic DFB-laser IQ modulator with SiGe differential driver for 32 GBd QPSK modulation[C]. Proceedings of 2015 European Conference on Optical Communication (ECOC), Valencia, Spain, 2015. doi: 10.1109/ECOC.2015.7341851.
|
[112] |
OZOLINS O, PANG Xiaodan, OLMEDO M I, et al. 100 GHz externally modulated laser for optical interconnects[J]. Journal of Lightwave Technology, 2017, 35(6): 1174–1179. doi: 10.1109/JLT.2017.2651947
|
[113] |
OGISO Y, OZAKI J, UEDA Y, et al. Over 67 GHz bandwidth and 1.5 V Vp InP-based optical IQ modulator with n-i-p-n heterostructure[J]. Journal of Lightwave Technology, 2017, 35(8): 1450–1455. doi: 10.1109/JLT.2016.2639542
|
[114] |
LV Qianqian, HAN Qin, PAN Pan, et al. Monolithic integration of a InP AWG and InGaAs photodiodes on InP platform[J]. Optics & Laser Technology, 2017, 90: 122–127. doi: 10.1016/j.optlastec.2016.08.012
|
[115] |
ZHOU Gan, RUNGE P, KEYVANINIA S, et al. High-power InP-based waveguide integrated modified uni-traveling-carrier photodiodes[J]. Journal of Lightwave Technology, 2017, 35(4): 717–721. doi: 10.1109/jlt.2016.2591266
|
[116] |
RUNGE P, GAN Zhou, BECKERWERTH T, et al. Waveguide integrated balanced photodetectors for coherent receiver[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2018, 24(2): 6100307. doi: 10.1109/JSTQE.2017.2723844
|
[117] |
HOPFER S, SHANI Y, and NIR D. A novel, wideband, lithium niobate electrooptic modulator[J]. Journal of Lightwave Technology, 1998, 16(1): 73–77. doi: 10.1109/50.654986
|
[118] |
GUARINO A, POBERAJ G, REZZONICO D, et al. Electro-optically tunable microring resonators in lithium niobate[J]. Nature Photonics, 2007, 1(7): 407–410. doi: 10.1038/nphoton.2007.93
|
[119] |
WANG Huan, LI Xihua, ZHOU Qiang, et al. LiNbO3 based 1×2 Y-branch digital optical switch integrated with S-bend variable optical attenuator[C]. Proceedings of 2010 Symposium on Photonics and Optoelectronics, Chengdu, China, 2010. doi: 10.1109/SOPO.2010.5504362.
|
[120] |
胡国华, 恽斌峰, 崔一平. 有机聚合物1×32波导热光开关阵列[J]. 光电子·激光, 2015, 26(10): 1873–1877. doi: 10.16136/j.joel.2015.10.0529
HU Guohua, YUN Binfeng, and CUI Yiping. Polymer 1×32 waveguide thermo-optical switch array[J]. Journal of Optoelectronics · Laser, 2015, 26(10): 1873–1877. doi: 10.16136/j.joel.2015.10.0529
|
[121] |
TANG Jie, WANG Longde, LI Ruozhou, et al. Low half-wave voltage Y-branch electro-optic polymer modulator based on side-chain polyurethane-imide[J]. Modern Physics Letters B, 2016, 30(17): 1650228. doi: 10.1142/S0217984916502286
|
[122] |
GOSCINIAK J, BOZHEVOLNYI S I, ANDERSEN T B, et al. Thermo-optic control of dielectric-loaded plasmonic waveguide components[J]. Optics Express, 2010, 18(2): 1207–1216. doi: 10.1364/OE.18.001207
|
[123] |
HAFFNER C, CHELLADURAI D, FEDORYSHYN Y, et al. Low-loss plasmon-assisted electro-optic modulator[J]. Nature, 2018, 556(7702): 483–486. doi: 10.1038/s41586-018-0031-4
|
[124] |
POLAT E O and KOCABAS C. Broadband optical modulators based on graphene supercapacitors[J]. Nano Letters, 2013, 13(12): 5851–5857. doi: 10.1021/nl402616t
|
[125] |
ANSELL D, RADKO I P, HAN Z, et al. Hybrid graphene plasmonic waveguide modulators[J]. Nature Communications, 2015, 6: 8846. doi: 10.1038/ncomms9846
|
[126] |
XIE Xiaojun, ZHOU Qiugui, NORBERG E, et al. High-power and high-speed heterogeneously integrated waveguide-coupled photodiodes on silicon-on-insulator[J]. Journal of Lightwave Technology, 2016, 34(1): 73–78. doi: 10.1109/JLT.2015.2491258
|
[127] |
ABBASI A, VERBIST J, SHIRAMIN L A, et al. 100-Gb/s electro-absorptive duobinary modulation of an InP-on-Si DFB laser[J]. IEEE Photonics Technology Letters, 2018, 30(12): 1095–1098. doi: 10.1109/LPT.2018.2833145
|
[128] |
CHEN Li, XU Qiang, WOOD M G, et al. Hybrid silicon and lithium niobate electro-optical ring modulator[J]. Optica, 2014, 1(2): 112–118. doi: 10.1364/optica.1.000112
|
[129] |
ZHANG Mian, BUSCAINO B, WANG Cheng, et al. Broadband electro-optic frequency comb generation in a lithium niobate microring resonator[J]. Nature, 2019. doi: 10.1038/s41586-019-1008-7
|
[130] |
TAKECHI M, TATEIWA Y, KUROKAWA M, et al. 64 GBaud high-bandwidth micro intradyne coherent receiver using high-efficiency and high-speed InP-based photodetector integrated with 90° hybrid[C]. Proceedings of 2017 Optical Fiber Communications Conference and Exhibition (OFC), Los Angeles, USA, 2017. doi: 10.1364/OFC.2017.Th1A.2.
|
[131] |
AIMONE A, FREY F, ELSCHNER R, et al. DAC-less 32-GBd PDM-256-QAM using low-power InP IQ segmented MZM[J]. IEEE Photonics Technology Letters, 2017, 29(2): 221–223. doi: 10.1109/LPT.2016.2636364
|
[132] |
LÓPEZ I G, AIMONE A, RITO P, et al. High-speed ultralow-power hybrid optical transmitter module with InP I/Q-SEMZM and BiCMOS drivers with 4-b integrated DAC[J]. IEEE Transactions on Microwave Theory and Techniques, 2016, 64(12): 4598–4610. doi: 10.1109/TMTT.2016.2622701
|
[133] |
WANG Jian and SUNGJOO L. Ge-photodetectors for Si-based optoelectronic integration[J]. Sensors, 2011, 11(1): 696–718. doi: 10.3390/s110100696
|
[134] |
KIM H S, KIM H J, HONG S E, et al. Fabrication and characteristics of an InP single HBT and waveguide PD on double stacked layers for an OEMMIC[J]. ETRI Journal, 2004, 26(1): 61–64. doi: 10.4218/etrij.04.0203.0018
|
[135] |
FEDELI J M, BAKIR B B, OLIVIER N, et al. InP on SOI devices for optical communication and optical network on chip[C]. Proceedings of SPIE 7942, Optoelectronic Integrated Circuits XIII, San Francisco, 2011. doi: 10.1117/12.878607.
|